KI7540DP features trenchfet power mosfet pwm optimized for high efficiency absolute maximum ratings t a =25 10 secs steady state 10 secs steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 11.8 7.6 -8.9 -5.7 a t a =70 9.5 6.1 -7.1 -4.6 a pulsed drain current i dm a continuous source current (diode conduction)* i s 2.9 1.1 -2.9 -1.1 a maximum power dissipation* t a =25 3.5 1.4 3.5 1.4 w t a =70 2.2 0.9 2.2 0.9 w operating junction and storage temperature range t j ,t stg *surface mounted on 1" x 1" fr4 board. parameter i d p d unit symbol n-channel p-channel 12 -12 8 8 20 -55to150 thermal resistance ratings typ max typ max t 10 sec 26 35 26 35 steady state 60 85 60 85 maximum junction-to-case (drain) steady state r thjc 3.9 5.5 3.9 5.5 *surface mounted on 1" x 1" fr4 board. unit parameter r thja maximum junction-to-ambient* /w n-channel p-channel symbol smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.6 1.5 v ds =v gs ,i d = -250 a p-ch -0.6 -1.5 v ds =0vv gs = 8v n-ch 100 v ds =0vv gs = 8v p-ch 100 v ds =9.6v,v gs =0v n-ch 1 v ds = -9.6v, v gs =0v p-ch -1 v ds =20v,v gs =0v,t j =55 n-ch 5 v ds = -20v, v gs =0v,t j =55 p-ch -5 v ds 5v,v gs =4.5v n-ch 20 v ds -5 v, v gs =-4.5v p-ch -20 v gs =4.5v,i d = 11.8a n-ch 0.014 0.017 v gs =-4.5v,i d = -8.9a p-ch 0.026 0.032 v gs =2.5v,i d = 9.8a n-ch 0.020 0.025 v gs =-2.5v,i d = -6.9a p-ch 0.043 0.053 v ds =5v,i d = 11.8a n-ch 32 v ds =-5v,i d = -8.9a p-ch 23 i s =2.9a,v gs = 0 v n-ch 0.77 1.2 i s = -2.9a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 11.5 17 v ds =6v,v gs =4.5v,i d = 11.8a p-ch 13 20 n-ch 3.2 p-channel p-ch 4.1 v ds =-6v,v gs =-4.5v,i d = -8.9a n-ch 2.5 p-ch 1.9 n-ch 1.7 p-ch 3.5 n channel n-ch 30 45 v dd =6v,r l =6 p-ch 35 55 i d =1a,v gen =4.5v,r g =6 n-ch 50 75 p-ch 42 65 p-channel n-ch 60 90 v dd =-6v,r l =6 p-ch 54 85 i d =-1a,v gen =-4.5v,r g =6 n-ch 25 40 p-ch 17 30 i f =2.9 a, d i /d t = 100 a/ s n-ch 40 80 i f =-2.9a,d i /d t =100a/ s p-ch 40 80 * pulse test; pulse width 300 s, duty cycle 2%. r ds(on) drain source on state resistance* diode forward voltage* total gate charge v sd g fs forward transconductance* rise time testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current i d(on) on state drain currenta v na a v gs( th) i gss i dss a s v source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time turn off delay time gate resistance r g nc gate source charge gate drain charge q gs q gd KI7540DP smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
